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Table of Content
Market for Bulk Ga N Crystals.- Development of the Bulk Ga N Substrate Market.- Vapor Phase Growth Technology.- Hydride Vapor Phase Epitaxy of Ga N.- Growth of Bulk Ga N Crystals by HVPE on Single Crystalline Ga N Seeds.- Freestanding Ga N Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology.- Nonpolar and Semipolar Ga N Growth by HVPE.- High Growth Rate MOVPE.- Solution Growth Technology.- Ammonothermal Growth of Ga N Under Ammono-Basic Conditions.- A Pathway Toward Bulk Growth of Ga N by the Ammonothermal Method.- Acidic Ammonothermal Growth Technology for Ga N.- Flux Growth Technology.- High Pressure Solution Growth of Gallium Nitride.- A Brief Review on the Na-Flux Method Toward Growth of Large-Size Ga N Crystal.- Low Pressure Solution Growth of Gallium Nitride.- Characterization of Ga N Crystals.- Optical Properties of Ga N Substrates.- Point Defects and Impurities in Bulk Ga N Studied by Positron Annihilation Spectroscopy.About the author
Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and Zn O. He has authored 130 publications in books, journals and conferences and holds 6 patents.Dr. Elke Meissner graduated from the University of Erlangen, Germany in the field of applied mineralogy. Later she received a Ph D from the University of Bayreuth, Germany. She is a senior scientist in the Department of Crystal Growth at the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen and became head of the working group Defect Engineering in 2007. She has a broad background in process properties correlation for advanced materials in various fields like silicon nitride ceramics and applied & experimental mineralogy. Her recent work is strongly focussed on the structural characterization of crystals and crystal layers of novel semiconductors. Dr. Meissner is inventor or co-inventor of 3 international patents and authored more than 50 papers or contributions to journals and conference.
Dr. Michal Bockowski received the M.Sc. Eng. in Solid State Physics from the Warsaw University of Technology, Poland and the Ph.D. in the Chemistry of Solids 1995 from the University Montpellier II, France. He is currently a Research Associate of the Institute of High Pressure Physics of the Polish Academy of Sciences and a technologist at Top Ga N Ltd., Poland. He has authored >120 publications in journals and conferences and holds 2 international patents.
Language English ● Format PDF ● Pages 326 ● ISBN 9783642048302 ● File size 11.3 MB ● Editor Dirk Ehrentraut & Elke Meissner ● Publisher Springer Berlin ● City Heidelberg ● Country DE ● Published 2010 ● Downloadable 24 months ● Currency EUR ● ID 2171219 ● Copy protection Social DRM
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