Mikhail Baklanov & Paul S. Ho 
Advanced Interconnects for ULSI Technology 

Finding new materials for copper/low-k interconnects is critical to
the continuing development of computer chips. While copper/low-k
interconnects have served well, allowing for the creation of Ultra
Large Scale Integration (ULSI) devices which combine over a billion
transistors onto a single chip, the increased resistance and
RC-delay at the smaller scale has become a significant factor
affecting chip performance.

Advanced Interconnects for ULSI Technology is dedicated
to the materials and methods which might be suitable replacements.
It covers a broad range of topics, from physical principles to
design, fabrication, characterization, and application of new
materials for nano-interconnects, and discusses:

* Interconnect functions, characterisations, electrical
properties and wiring requirements

* Low-k materials: fundamentals, advances and mechanical
properties

* Conductive layers and barriers

* Integration and reliability including mechanical reliability,
electromigration and electrical breakdown

* New approaches including 3D, optical, wireless interchip, and
carbon-based interconnects

Intended for postgraduate students and researchers, in academia
and industry, this book provides a critical overview of the
enabling technology at the heart of the future development of
computer chips.

关于作者

Mikhail R. Baklanov
IMEC, Leuven, Belgium

Paul S. Ho
Laboratory for Interconnect and Packaging, University of Texas at Austin, Austin, Texas, USA

Ehrenfried Zschech
Fraunhofer Institute for Nondestructive Testing, Dresden, Germany